GCMX034B120B2B1P is a 1200V silicon carbide half-bridge module with 50 A continuous drain current at 25°C case temperature and 33 mΩ drain-source on-resistance. It features press-fit terminals, Kelvin source connections, and an isolated package for direct heatsink mounting. The module operates with a junction temperature up to 175°C and has a thermal resistance junction-to-case of 0.82-0.93°C/W. Package weight is 21 g, with mounting torque of 2.00-2.30 N-m for M4 screws. The integrated freewheeling diode has a forward voltage of 3.7-4.1 V and reverse recovery charge of 249 nC. The module includes an NTC thermistor with 5 kΩ resistance at 25°C and meets 3000 V isolation voltage. RoHS3 compliant.
GEN3 1200V 34M SIC MOSFET HALF B
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1560-GCMX034B120B2B1P-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | Module |
