The GCMX020A120B2B1P is a 1200V silicon carbide half-bridge module designed for high-efficiency power conversion in applications such as photovoltaic inverters, battery chargers, and energy storage systems. It features press-fit terminal connections, a Kelvin source for stable gate control, and a direct-mount isolated package that enables mounting directly to a heatsink. The module measures 21 grams and supports a maximum junction temperature of 175°C with a thermal resistance from junction to case of 0.35 to 0.39°C/W. It is rated for a continuous drain current of 102A at 25°C case temperature and a pulsed drain current of 250A. The gate-source voltage is rated for -5V to 20V, and the device meets RoHS Directive 2011/65/EC compliance.
MOSFET 2N-CH 1200V 102A
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1560-GCMX020A120B2B1P-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | Module |
