GCMX005A120B3B1P is a 1200 V silicon carbide half-bridge module designed for high-efficiency power conversion in applications such as photovoltaic inverters and energy storage systems. It features press-fit terminal connections and an isolated package for direct heatsink mounting, with a thermal resistance from junction to case of 0.12-0.13 °C/W. The module has a continuous drain current rating of 383 A at 25 °C case temperature and a maximum junction temperature of 175 °C. It incorporates Kelvin source connections for stable gate drive and a rugged body diode with reverse recovery charge of 1483 nC at 25 °C. The package weighs 40 g and meets RoHS compliance per Directive 2011/65/EC.
MOSFET 4N-CH 1200V 383A
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1560-GCMX005A120B3B1P-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | Module |
