SemiQ Inc. Single FETs, MOSFETs GCMS080C120S1-E1

The GCMS080C120S1-E1 is a 1200V silicon carbide copack power module integrating a MOSFET and freewheeling Schottky diode for high-efficiency switching in inverters, battery chargers, and server power supplies. It is packaged in a SOT-227 case with an isolated backplate, weighing 32 g. The MOSFET has a continuous drain current of 28 A at 25°C and a drain-source on-resistance of 84 mΩ at 25°C, rising to 136 mΩ at 175°C. The diode has a forward voltage of 1.63 V at 10 A and 25°C. Single pulse avalanche energy is 160 mJ. Junction-to-case thermal resistance is 1.01 °C/W for the MOSFET and 1.07 °C/W for the diode. The module includes a Kelvin source, is avalanche-tested, and complies with JEDEC JESD22-A104 Condition G. RoHS 2 compliant.