SemiQ Inc. Single FETs, MOSFETs GCMS040C120S1-E1

The GCMS040C120S1-E1 is a 1200 V silicon carbide copack power module integrating a SiC MOSFET and a freewheeling SiC Schottky barrier diode for high-efficiency switching in applications such as photovoltaic inverters and server power supplies. It is packaged in a SOT-227 format measuring 31.67 to 31.90 mm in length, 7.95 to 8.18 mm in width, and 38.00 to 38.10 mm in height, with a mass of 32 g. The module has a continuous drain current of 53 A at 25°C case temperature and an on-resistance of 39 mΩ at 25°C. It supports a maximum junction temperature of 175°C, with a junction-to-case thermal resistance of 0.66 to 0.82 °C/W for the MOSFET. The device is avalanche-tested to 330 mJ and features a Kelvin source connection for stable gate drive. It meets RoHS compliance per EU Directive 2011/65/EC and is qualified under JEDEC JESD22-A104 Condition G.