SemiQ Inc. Single FETs, MOSFETs GCMS034C120S1-E1

The GCMS034C120S1-E1 is a 1200V SiC COPACK power module integrating a SiC MOSFET and a freewheeling SiC Schottky barrier diode in a SOT-227 package, measuring 31.67 to 31.90 mm in length, 7.95 to 8.18 mm in width, and 4.14 to 4.24 mm in height. It supports a continuous drain current of 53 A at 25°C case temperature and has a maximum junction temperature of 175°C. The MOSFET has a typical on-resistance of 34 mΩ at 25°C and 63 mΩ at 175°C, with a gate threshold voltage between 1.8 V and 4 V. The module features a Kelvin source connection, an isolated backplate, and is avalanche tested to 330 mJ. Thermal resistance from junction to case is 0.66 to 0.82 °C/W for the MOSFET and 0.70 to 0.87 °C/W for the diode. It complies with RoHS2 and meets JEDEC standard qualification conditions.