SemiQ Inc. Single FETs, MOSFETs GCMS010B120S1-E1

The GCMS010B120S1-E1 is a 1200V silicon carbide copack power module integrating a SiC MOSFET and a freewheeling SiC Schottky barrier diode in a SOT-227 package, designed for high-efficiency switching in applications such as photovoltaic inverters and server power supplies. The module supports a continuous drain current of 204 A at 25°C and has a drain-source on-resistance of 9 mΩ at 25°C. Thermal resistance from junction to case is 0.19°C/W for the MOSFET and 0.22°C/W for the diode. The package allows direct heatsink mounting, features a Kelvin source connection for stable gate drive, and operates within a junction temperature range of -55°C to 175°C. The diode exhibits zero reverse recovery and a forward voltage of 1.56 V at 100 A and 25°C.