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Semikron, Inc. Igbt Array & Module Transistor, Dual N Channel, 313 A, 1.8 V, 1.2 Kv, Module Rohs Compliant Semikron SKM200GB12E4

Description
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies. Compact SEMITOP® package. Suitable for switching frequencies up to 12kHz. Insulated copper baseplate using Direct Bonded Copper technology Transistor Configuration = Series Configuration = Dual Half Bridge Maximum Continuous Collector Current = 314 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Channel Type = N Mounting Type = Panel Mount Package Type = SEMITRANS3 Pin Count = 7 Dimensions = 106.4 x 61.4 x 30mm
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Suppliers

Company
Product
Description
Supplier Links
 - 6874973 - RS Components, Ltd.
Corby, Northants, United Kingdom
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies. Compact SEMITOP® package. Suitable for switching frequencies up to 12kHz. Insulated copper baseplate using Direct Bonded Copper technology Transistor Configuration = Series Configuration = Dual Half Bridge Maximum Continuous Collector Current = 314 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Channel Type = N Mounting Type = Panel Mount Package Type = SEMITRANS3 Pin Count = 7 Dimensions = 106.4 x 61.4 x 30mm

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
Compact SEMITOP® package. Suitable for switching frequencies up to 12kHz. Insulated copper baseplate using Direct Bonded Copper technology
Transistor Configuration = Series
Configuration = Dual Half Bridge
Maximum Continuous Collector Current = 314 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±20V
Channel Type = N
Mounting Type = Panel Mount
Package Type = SEMITRANS3
Pin Count = 7
Dimensions = 106.4 x 61.4 x 30mm

Supplier's Site
Igbt Array & Module Transistor, Dual N Channel, 313 A, 1.8 V, 1.2 Kv, Module Rohs Compliant Semikron - 55X3191 - Newark, An Avnet Company
Chicago, IL, United States
Igbt Array & Module Transistor, Dual N Channel, 313 A, 1.8 V, 1.2 Kv, Module Rohs Compliant Semikron
55X3191
Igbt Array & Module Transistor, Dual N Channel, 313 A, 1.8 V, 1.2 Kv, Module Rohs Compliant Semikron 55X3191
IGBT Array & Module Transistor, Dual N Channel, 313 A, 1.8 V, 1.2 kV, Module RoHS Compliant: Yes

IGBT Array & Module Transistor, Dual N Channel, 313 A, 1.8 V, 1.2 kV, Module RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  RS Components, Ltd. Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 6874973 55X3191
Product Name Igbt Array & Module Transistor, Dual N Channel, 313 A, 1.8 V, 1.2 Kv, Module Rohs Compliant Semikron
Polarity N-Channel N-Channel
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