Semikron, Inc. Igbt Array & Module Transistor, Dual N Channel, 313 A, 1.8 V, 1.2 Kv, Module Rohs Compliant Semikron SKM200GB12E4

SKM200GB12E4 is a dual IGBT module with a 1200 V blocking voltage and a continuous collector current of 313 A at 25°C case temperature. It uses IGBT4 and CAL4 technology with a direct bonded copper (DBC) baseplate and an integrated gate resistor, optimized for switching frequencies up to 12 kHz. The module has a case temperature limit of 125°C max and is rated for operating junction temperatures up to 175°C. Its collector-emitter saturation voltage is 1.80 V at 200 A and 25°C, with a thermal resistance from junction to case of 0.14 K/W per IGBT and 0.26 K/W per diode. The package is a SEMITRANS® 3 module weighing 325 g, with M6 mounting holes and terminal connections. It is UL recognized under file number E63532.