IGBT Array & Module Transistor, NPN, 232 A, 1.8 V, 1.2 kV, Module RoHS Compliant: Yes
IGBT MODULE, SINGLE, 1.2KV, 232A; Continuous Collector Current:232A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
| Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 55X3185 | 77R2547 |
| Product Name | Igbt Array & Module Transistor, Npn, 232 A, 1.8 V, 1.2 Kv, Module Rohs Compliant Semikron | Igbt Module, Single, 1.2Kv, 232A; Continuous Collector Current Semikron |
| Package Type | TO-3 | TO-3 |