0.05 K⁄W (Max.) Thermal Resistance, 20 nH (Max.) Collector to Emitter Inductance, Ultra Fast IGBT
N-Channel, homogeneous Si
Low inductance case
Short tail current with low temperature dependence
High short circuit capability
Fast & soft inverse CAL diodes
Isolated copper baseplate using direct copper bonding technology
Large clearance (13 mm) a
0.05 K⁄W (Max.) Thermal Resistance, 20 nH (Max.) Collector to Emitter Inductance, Ultra Fast IGBT
- N-Channel, homogeneous Si
- Low inductance case
- Short tail current with low temperature dependence
- High short circuit capability
- Fast & soft inverse CAL diodes
- Isolated copper baseplate using direct copper bonding technology
- Large clearance (13 mm) a