Semikron, Inc. IGBT, Ultra Fast; IGBT; 1200 V; 400 A @degC; 20 V; 390 A @ 25 degC; -40 SKM 400 GB125D

Description
0.05 K⁄W (Max.) Thermal Resistance, 20 nH (Max.) Collector to Emitter Inductance, Ultra Fast IGBT N-Channel, homogeneous Si Low inductance case Short tail current with low temperature dependence High short circuit capability Fast & soft inverse CAL diodes Isolated copper baseplate using direct copper bonding technology Large clearance (13 mm) a
Description
0.05 K⁄W (Max.) Thermal Resistance, 20 nH (Max.) Collector to Emitter Inductance, Ultra Fast IGBT N-Channel, homogeneous Si Low inductance case Short tail current with low temperature dependence High short circuit capability Fast & soft inverse CAL diodes Isolated copper baseplate using direct copper bonding technology Large clearance (13 mm) a

Suppliers

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Supplier Links
IGBT, Ultra Fast; IGBT; 1200 V; 400 A @degC; 20 V; 390 A @ 25 degC; -40 - 70098226 - Allied Electronics, Inc.
Fort Worth, TX, USA
IGBT, Ultra Fast; IGBT; 1200 V; 400 A @degC; 20 V; 390 A @ 25 degC; -40
70098226
IGBT, Ultra Fast; IGBT; 1200 V; 400 A @degC; 20 V; 390 A @ 25 degC; -40 70098226
0.05 K⁄W (Max.) Thermal Resistance, 20 nH (Max.) Collector to Emitter Inductance, Ultra Fast IGBT N-Channel, homogeneous Si Low inductance case Short tail current with low temperature dependence High short circuit capability Fast & soft inverse CAL diodes Isolated copper baseplate using direct copper bonding technology Large clearance (13 mm) a

0.05 K⁄W (Max.) Thermal Resistance, 20 nH (Max.) Collector to Emitter Inductance, Ultra Fast IGBT

  • N-Channel, homogeneous Si
  • Low inductance case
  • Short tail current with low temperature dependence
  • High short circuit capability
  • Fast & soft inverse CAL diodes
  • Isolated copper baseplate using direct copper bonding technology
  • Large clearance (13 mm) a
Supplier's Site

Technical Specifications

  Allied Electronics, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 70098226
Product Name IGBT, Ultra Fast; IGBT; 1200 V; 400 A @degC; 20 V; 390 A @ 25 degC; -40
Polarity N-Channel
VCE(on) 3.3 volts
tr 70 ns
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