Semikron, Inc. Igbt Module, Npn, 1.2Kv, 683A; Continuous Collector Current Semikron SEMIX453GAR12E4S

SEMiX453GAR12E4s is a three-phase IGBT module with a 1200 V collector-emitter voltage rating and a continuous collector current of 450 A at 80°C case temperature. It features trench-gate IGBT technology with a positive temperature coefficient for V_CE(sat), high short-circuit capability of 10 µs at 1200 V, and integrated freewheeling diodes. The module is housed in a stud-mount case with a mass of 300 g and a maximum case temperature of 125°C. Thermal resistance from junction to case is 0.065 K/W for the IGBTs and 0.11 K/W for the diodes. It is UL recognized under file E63532 and rated for operating temperatures from -40°C to 175°C. Mounting torque to the heat sink is 3-5 Nm (M5), and to terminals is 2.5-5 Nm (M6).