SEMiX223GD12E4c is a six-pack IGBT module with 1200 V collector-emitter voltage rating and 225 A continuous collector current. It features trench gate technology, a positive temperature coefficient for V_CE(sat), and 10 µs short-circuit withstand capability. The module is packaged in a SEMiX® 33c housing, weighing 900 g, with a maximum case temperature of 125°C and operating junction temperature range of -40 to 175°C. Thermal resistance from junction to case is 0.135 K/W for the IGBT and 0.22 K/W for the diode. It meets UL 94 V-0 flammability requirement and is UL recognized under file E63532. Terminal mounting torque for heat sink is 3 to 5 Nm and for terminals is 2.5 to 5 Nm.
IGBT MODULE, SIX, 1.2KV, 333A; Continuous Collector Current:333A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:-; Operating Temperature Max:125°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 77R2108 |
| Product Name | Igbt Module, Six, 1.2Kv, 333A; Continuous Collector Current Semikron |
| TJ | ? to 125 C (? to 257 F) |