SemiGen Fast-Switching, Low-Power PIN Diode SGP7021

Description
The SemiGen SGP7000 series of PIN Diodes are processed with a high-resistivity epi that have intrinsic layers that range in thickness from 4 micron to 200 micron depending on performance specifications. These devices are typically manufactured with either a robust thermal-oxide passivation or ceramic glass for durable high-power applications. These diodes are made with a grown junction P++ layer that yields abrupt junction structures that provide low punch through voltages and minimize autodoping. They are available as chips or in your choice of packages. Features: Low Capacitance and Resistance Easily Bondable with our F.A.C. Mesas High Reliability Applications: For use in low- to high-power switch, attenuator, duplexer and phase-shifting applications from 2 to 20 GHz.
  • Fast-Switching, Low-Power PIN Diode - SGP7021 - SemiGen
    SemiGen
Description
The SemiGen SGP7000 series of PIN Diodes are processed with a high-resistivity epi that have intrinsic layers that range in thickness from 4 micron to 200 micron depending on performance specifications. These devices are typically manufactured with either a robust thermal-oxide passivation or ceramic glass for durable high-power applications. These diodes are made with a grown junction P++ layer that yields abrupt junction structures that provide low punch through voltages and minimize autodoping. They are available as chips or in your choice of packages. Features: Low Capacitance and Resistance Easily Bondable with our F.A.C. Mesas High Reliability Applications: For use in low- to high-power switch, attenuator, duplexer and phase-shifting applications from 2 to 20 GHz.

Suppliers

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Product
Description
Supplier Links
Fast-Switching, Low-Power PIN Diode - SGP7021 - SemiGen
SemiGen
Londonderry, NH, USA
Fast-Switching, Low-Power PIN Diode
SGP7021
Fast-Switching, Low-Power PIN Diode SGP7021
The SemiGen SGP7000 series of PIN Diodes are processed with a high-resistivity epi that have intrinsic layers that range in thickness from 4 micron to 200 micron depending on performance specifications. These devices are typically manufactured with either a robust thermal-oxide passivation or ceramic glass for durable high-power applications. These diodes are made with a grown junction P++ layer that yields abrupt junction structures that provide low punch through voltages and minimize autodoping. They are available as chips or in your choice of packages. Features: Low Capacitance and Resistance Easily Bondable with our F.A.C. Mesas High Reliability Applications: For use in low- to high-power switch, attenuator, duplexer and phase-shifting applications from 2 to 20 GHz.

The SemiGen SGP7000 series of PIN Diodes are processed with a high-resistivity epi that have intrinsic layers that range in thickness from 4 micron to 200 micron depending on performance specifications. These devices are typically manufactured with either a robust thermal-oxide passivation or ceramic glass for durable high-power applications. These diodes are made with a grown junction P++ layer that yields abrupt junction structures that provide low punch through voltages and minimize autodoping. They are available as chips or in your choice of packages.

Features:

  • Low Capacitance and Resistance
  • Easily Bondable with our F.A.C. Mesas
  • High Reliability

Applications:

For use in low- to high-power switch, attenuator, duplexer and phase-shifting applications from 2 to 20 GHz.

Supplier's Site

Technical Specifications

  SemiGen
Product Category PIN Diodes
Product Number SGP7021
Product Name Fast-Switching, Low-Power PIN Diode
Package PK 11,19, 20, 25, 28, 31, 32, 33, 35, 36, 37,38, 43, 75
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