Sanken Electric Co., Ltd. Bipolar Transistor Arrays SLA4031

Description
Bipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 120V 4A 5W Through Hole 12-SIP
  • Bipolar Transistor Arrays - SLA4031-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Arrays - SLA4031 - 046938-SLA4031 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - SLA4031 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 120V 4A 5W Through Hole 12-SIP
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Bipolar Transistor Arrays - SLA4031-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
SLA4031-ND
Bipolar Transistor Arrays SLA4031-ND
Bipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 120V 4A 5W Through Hole 12-SIP

Bipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 120V 4A 5W Through Hole 12-SIP

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Arrays - SLA4031 - 046938-SLA4031 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - SLA4031
046938-SLA4031
TRANSISTORS - Transistors (BJT) - Arrays - SLA4031 046938-SLA4031
Manufacturer: Sanken Win Source Part Number: 046938-SLA4031 Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: 4 NPN Darlington (Quad) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 12-SIP Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 120V Max Vce (sat): 1.5V @ 2mA, 2A Collector Cut-off Current(Max): 10μA (ICBO) Typical Gain (hFE) (Min): 2000 @ 2A, 2V Maximum Power Dissipation: 5W Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance

Manufacturer: Sanken
Win Source Part Number: 046938-SLA4031
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: 4 NPN Darlington (Quad)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 12-SIP
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 120V
Max Vce (sat): 1.5V @ 2mA, 2A
Collector Cut-off Current(Max): 10μA (ICBO)
Typical Gain (hFE) (Min): 2000 @ 2A, 2V
Maximum Power Dissipation: 5W
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - SLA4031 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
SLA4031
Discrete Semiconductor Products - Transistors - Bipolar (BJT) SLA4031
TRANS 4NPN DARL 120V 4A 12SIP

TRANS 4NPN DARL 120V 4A 12SIP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number SLA4031-ND 046938-SLA4031 SLA4031
Product Name Bipolar Transistor Arrays TRANSISTORS - Transistors (BJT) - Arrays - SLA4031 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; 4 NPN Darlington (Quad)
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