Sanken Electric Co., Ltd. TRANSISTORS - Transistors - FETs, MOSFETs - RF - EKI04047 EKI04047

Description
Manufacturer: Sanken Win Source Part Number: 1035978-EKI04047 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 90W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.5V @ 650μA Max Gate Charge: 35.3nC @ 10V Max Input Capacitance: 2410pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.2 mOhm @ 42.8A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - EKI04047 - 1035978-EKI04047 - Win Source Electronics
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Description
Manufacturer: Sanken Win Source Part Number: 1035978-EKI04047 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 90W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.5V @ 650μA Max Gate Charge: 35.3nC @ 10V Max Input Capacitance: 2410pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.2 mOhm @ 42.8A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - EKI04047 - 1035978-EKI04047 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - EKI04047
1035978-EKI04047
TRANSISTORS - Transistors - FETs, MOSFETs - RF - EKI04047 1035978-EKI04047
Manufacturer: Sanken Win Source Part Number: 1035978-EKI04047 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 90W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.5V @ 650μA Max Gate Charge: 35.3nC @ 10V Max Input Capacitance: 2410pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.2 mOhm @ 42.8A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient

Manufacturer: Sanken
Win Source Part Number: 1035978-EKI04047
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 90W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 650μA
Max Gate Charge: 35.3nC @ 10V
Max Input Capacitance: 2410pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.2 mOhm @ 42.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1035978-EKI04047
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - EKI04047
Polarity N-Channel; N-Channel
V(BR)DSS 40 volts
PD 90000 milliwatts
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