Samsung Electronics Co., Ltd. Memory IC and Storage Component MZ-V7S1T0E

Description
1TB SSD M.2-2280 970 EVO Plus NVMe Product overview: MZ-V7S1T0E from SAMSUNG is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, SSDs, HDDs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 503-MZ-V7S1T0E can be used for catalog matching and distributor lookup.
Request a Quote
Description
1TB SSD M.2-2280 970 EVO Plus NVMe Product overview: MZ-V7S1T0E from SAMSUNG is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, SSDs, HDDs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 503-MZ-V7S1T0E can be used for catalog matching and distributor lookup.
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Memory IC and Storage Component - 503-MZ-V7S1T0E - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
503-MZ-V7S1T0E
Memory IC and Storage Component 503-MZ-V7S1T0E
1TB SSD M.2-2280 970 EVO Plus NVMe Product overview: MZ-V7S1T0E from SAMSUNG is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, SSDs, HDDs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 503-MZ-V7S1T0E can be used for catalog matching and distributor lookup.

1TB SSD M.2-2280 970 EVO Plus NVMe Product overview: MZ-V7S1T0E from SAMSUNG is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, SSDs, HDDs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 503-MZ-V7S1T0E can be used for catalog matching and distributor lookup.

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD.
Product Category Memory Chips
Product Number 503-MZ-V7S1T0E
Product Name Memory IC and Storage Component
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420768 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Operating Temperature -40 C (-40 F)
View Details
Memory - AS28F128J3A - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 115 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 27LS00A/BEA - Quarktwin Technology Ltd.
Rochester Electronics
View Details
2 suppliers