DDR DRAM Module, 128MX64, 0.45ns, CMOS, LEAD FREE, SODIMM-200 Product overview: M470T2864QZ3-CE6 from SAMSUNG is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory - Modules. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 505-M470T2864QZ3-CE6
Win Source Part Number: 950659-M470T2864QZ3-
Series: *
Categories: Memory - Modules
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|
| Product Category | Memory Chips | Memory Chips |
| Product Number | 505-M470T2864QZ3-CE6 | 950659-M470T2864QZ3-CE6 |
| Product Name | Memory IC and Storage Component | Memory - Modules - M470T2864QZ3-CE6 |
| Memory Category | DRAM Chip | |
| Access Time | 0.4500 ns | |
| Operating Temperature | 0 C (32 F) | |
| Number of Words | 134217728 k |
