Rochester Electronics Integrated Circuits (ICs) - Memory - Memory 4164-15FGS/BZA

Description
4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA)
Request a Quote Datasheet
Description
4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - 4164-15FGS/BZA - Rochester Electronics
Newburyport, MA, United States
4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA)

4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA)

Supplier's Site Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
4164-15FGS/BZA
Integrated Circuits (ICs) - Memory - Memory 4164-15FGS/BZA
DUAL MARKED (8201006ZA)

DUAL MARKED (8201006ZA)

Supplier's Site
DUAL MARKED (8201006ZA)

DUAL MARKED (8201006ZA)

Supplier's Site Datasheet
Memory - 4164-15FGS/BZA - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory IC

Memory IC

Buy Now

Technical Specifications

  Rochester Electronics Acme Chip Technology Co., Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 4164-15FGS/BZA 4164-15FGS/BZA 4164-15FGS/BZA 4164-15FGS/BZA
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 5962-8961413QXA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 70 ns
Density 1000 kbits
View Details
Memory - 27S13A/BEA - Quarktwin Technology Ltd.
Rochester Electronics
Specs
Memory Category PROM; PROM
Access Time 40 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details