Samsung Electronics Co., Ltd. Memory - RAM - K4T51163QI-HCE6000 K4T51163QI-HCE6000

Manufacturer: Samsung
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1231118-K4T51163QI-HCE6000
Operating Supply Voltage: 1.8 V
Access Time: 450 ps
Density: 512 Mb
Number of Pins: 84
Categories: RAM
Case / Package: FBGA
Max Frequency: 667 MHz
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Mount: Surface Mount
RoHS: Compliant
Min Operating Temperature: 0 °C
Max Supply Voltage: 1.9 V
Min Supply Voltage: 1.7 V
Max Operating Temperature: 95 °C
Nominal Supply Current: 115 mA
Address Bus Width: 15 b

K4T51163QI-HCE6000 Product overview: K4T51163QI-HCE6000 from SAMSUNG is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4T51163QI-HCE6000 can be used for catalog matching and distributor lookup.