Samsung Electronics Co., Ltd. Memory - DDR - K4B4G1646I-BCNB K4B4G1646I-BCNB

Description
Win Source Part Number: 940813-K4B4G1646I-BC NB Series: * Categories: Memory
  • Memory - DDR - K4B4G1646I-BCNB - 940813-K4B4G1646I-BCNB - Win Source Electronics
    Win Source Electronics
Request a Quote
Description
Win Source Part Number: 940813-K4B4G1646I-BC NB Series: * Categories: Memory
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Memory - DDR - K4B4G1646I-BCNB - 940813-K4B4G1646I-BCNB - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Memory - DDR - K4B4G1646I-BCNB
940813-K4B4G1646I-BCNB
Memory - DDR - K4B4G1646I-BCNB 940813-K4B4G1646I-BCNB
Win Source Part Number: 940813-K4B4G1646I-BC NB Series: * Categories: Memory

Win Source Part Number: 940813-K4B4G1646I-BCNB
Series: *
Categories: Memory

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Memory Chips
Product Number 940813-K4B4G1646I-BCNB
Product Name Memory - DDR - K4B4G1646I-BCNB
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 27C512AE200/883C - Lingto Electronic Limited
Rochester Electronics
Memory
27C512AE200/883C
Specs
Memory Category EPROM; EPROM
Access Time 200 ns
Density 512 kbits
View Details
SN74ACT2229 256 x 1 x 2 dual independent synchronous FIFO memories - SN74ACT2229DWR - Texas Instruments
Texas Instruments
SN74ACT2229 256 x 1 x 2 dual independent synchronous FIFO memories
SN74ACT2229DWR
Specs
Memory Category FIFO
Package Type SOIC
View Details
5 suppliers
Memory - 2161729 - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
2161729
View Details
Memory - MYX4DD3K128M72PBG2 - Micross Components, Inc.
Micross Components, Inc.
Memory
MYX4DD3K128M72PBG2
Specs
Memory Category DDR3
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 1024000 kbits
View Details