DDR DRAM, 256MX8, 0.255ns, CMOS, PBGA78 Product overview: K4B2G0846D-HCH9 from SAMSUNG is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4B2G0846D-HCH9 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Memory Chips |
| Product Number | 774-K4B2G0846D-HCH9 |
| Product Name | Memory IC and Storage Component |
| Memory Category | DRAM Chip |
| Access Time | 0.2550 ns |
| Operating Temperature | 0 C (32 F) |
| Density | 2000000 kbits |
| Number of Words | 32000 k |
