Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | US6M2 | US6M2 |
| Product Name | 2.5V Drive Nch+Pch MOSFET | 2.5V Drive Nch+Pch MOSFET |
| Polarity | N-Channel; P-Channel | N-Channel; P-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 1500 milliamps | 1500 milliamps |
| PD | 1000 milliwatts | 1000 milliwatts |
