Mosfet Array N and P-Channel 30V, 20V 1.4A, 1A 1W Surface Mount TUMT6
Mosfet Array N and P-Channel 30V, 20V 1.4A, 1A 1W Surface Mount TUMT6
Mosfet Array N and P-Channel 30V, 20V 1.4A, 1A 1W Surface Mount TUMT6
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1116729-US6M1TR
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TUMT6
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 30V, 20V
Continuous Drain Current at 25°C: 1.4A, 1A
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 2nC @ 5V
Max Input Capacitance: 70pF @ 10V
Maximum Rds On at Id,Vgs: 240 mOhm @ 1.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited
MOSFET N/P-CH 30V/20V TUMT6 Product overview: US6M1TR from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 20V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-US6M1TR can be used for catalog matching and distributor lookup.
MOSFET N/P-CH 30V/20V TUMT6
MOSFET N/P-CH 30V/20V TUMT6
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | US6M1DKR-ND | 1116729-US6M1TR | 289-US6M1TR | 687-US6M1TR | US6M1TR | US6M1TR |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - US6M1TR | 30V 20V MOSFET Transistor | MOSFET N/P-CH 30V/20V TUMT6 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | 6-SMD, Flat Leads | SOT3; TUMT6 | Tape & Reel (TR) | |||
| Polarity | P-Channel | N-Channel; P-Channel | N-Channel; N-CHANNEL | |||
| V(BR)DSS | 30 to 20 volts | -20 volts | ||||
| PD | 1000 milliwatts | 1 milliwatts | 1000 milliwatts | |||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) |
