The US6K2 is a dual N-channel MOSFET in a TUMT6 surface-mount package designed for switching applications. It has a drain-source voltage rating of 30 V, continuous drain current of ±1.4 A, and maximum power dissipation of 1.0 W. The device features low on-resistance (up to 240 mΩ at V_GS = 10 V), built-in gate-source protection diodes, and is characterized for operation at -4 V gate drive. It is RoHS compliant and rated for a junction temperature range of -55 to +150 °C. Thermal resistance junction-to-ambient is up to 137 °C/W when mounted on FR4 with a 625 mm² copper pad.
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
4V Drive Nch+Nch MOS FET Product overview: US6K2 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-US6K2 can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1278273-US6K2
Manufacturer Homepage: www.rohm.com
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | US6K2 | US6K2 | 285-US6K2 | 1278273-US6K2 |
| Product Name | 4V Drive Nch+Nch MOSFET | 4V Drive Nch+Nch MOSFET | 4V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - US6K2 |
| Polarity | N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | ||
| IDSS | 1400 milliamps | 1400 milliamps | ||
| PD | 1000 milliwatts | 1000 milliwatts |
