US6J12 is a -12V P-channel dual MOSFET in a TUMT6 surface-mount package, designed for switching applications. It has a maximum continuous drain current of ±2A, a maximum on-resistance of 105mΩ at -4.5V gate-source voltage, and a power dissipation rating of 1.0W. The device features built-in gate-source protection diodes, is RoHS compliant, and operates with a junction temperature range of -55°C to +150°C.
US6J12 is low on-resistance MOSFET, suitable for switching application.
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
US6J12 is low on-resistance MOSFET, suitable for switching application.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | US6J12 | US6J12 |
| Product Name | -12V Pch+Pch Small Signal MOSFET | 1.5V Drive Pch+Pch MOSFET |
| Polarity | P-Channel | P-Channel |
| V(BR)DSS | -12 volts | -12 volts |
| IDSS | -2000 milliamps | -2000 milliamps |
| PD | 1000 milliwatts | 1000 milliwatts |
