Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1278271-US6J11
Manufacturer Homepage: www.rohm.com
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | Win Source Electronics | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | US6J11 | US6J11 | 1278271-US6J11 |
| Product Name | 1.5V Drive Pch+Pch MOSFET | 1.5V Drive Pch+Pch MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - US6J11 |
| Polarity | P-Channel | P-Channel | |
| V(BR)DSS | -12 volts | -12 volts | |
| IDSS | -1300 milliamps | -1300 milliamps | |
| PD | 1000 milliwatts | 1000 milliwatts |
