The US5U35 is a P-channel MOSFET with a built-in Schottky barrier diode in a SOT-353T package, designed for low-voltage switching applications. It has a drain-source voltage rating of -45 V, a continuous drain current of ±0.7 A, and a maximum on-resistance of 800 mΩ at -4.5 V gate drive. The integrated Schottky diode has a forward voltage of up to 0.55 V at 100 mA and a repetitive peak reverse voltage of 45 V. Total power dissipation is 1.0 W, with a junction temperature range of -55°C to +150°C. The device is RoHS compliant and packaged in tape and reel for surface-mount assembly.
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | US5U35 | US5U35 |
| Product Name | 4V Drive Pch+SBD MOSFET | 4V Drive Pch+SBD MOSFET |
| Polarity | P-Channel | P-Channel |
| V(BR)DSS | -45 volts | -45 volts |
| IDSS | -700 milliamps | -700 milliamps |
| PD | 700 milliwatts | 700 milliwatts |
