The US5U2 is a 4V drive N-channel MOSFET with a built-in Schottky barrier diode in a TUMT5 package, designed for switching applications. It has a drain-source voltage rating of 30 V and a continuous drain current of ±1.4 A. The MOSFET features a gate threshold voltage of 1.0 to 2.5 V and an on-state resistance of 250 to 380 mΩ at VGS=4 V. The integrated Schottky diode has a forward voltage of 0.36 V at 0.1 A and 0.47 V at 0.5 A, with a peak reverse voltage of 30 V. Total power dissipation is 1.0 W. The device operates with a storage temperature range of -55 to +150 °C and a channel junction temperature of 150 °C.
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | US5U2 | US5U2 |
| Product Name | 4V Drive Nch+SBD MOSFET | 4V Drive Nch+SBD MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 1400 milliamps | 1400 milliamps |
| PD | 700 milliwatts | 700 milliwatts |
