The UMZ1N FHA is a dual transistor device containing an NPN and a PNP transistor in a SOT-363 (UMT6) package, intended for general purpose small signal amplification. Each transistor has a collector-emitter voltage rating of 50 V and a collector current rating of 150 mA. The device is AEC-Q101 qualified for automotive applications. Total power dissipation is 150 mW, with each element dissipating up to 120 mW. The package dimensions and pin configuration are compatible with UMT3 automatic mounting systems, reducing mounting area and cost. Minimum DC current gain is 120 at 1 mA collector current, and transition frequency exceeds 140 MHz for the PNP and 180 MHz for the NPN transistor. The junction temperature range is -55°C to +150°C.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | UMZ1NFHA | UMZ1NFHA |
| Product Name | NPN+PNP, SOT-363, General Purpose Amplification Transistor for Automotive | PNP+NPN General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
| Polarity | NPN; PNP | NPN; PNP |
