The UMZ1N is a dual transistor device integrating an NPN and a PNP transistor in a SOT-363 package, designed for general-purpose small signal amplification. It has a collector-emitter voltage rating of 50 V for the NPN and -50 V for the PNP, with a maximum collector current of 150 mA for each element. The total power dissipation is limited to 150 mW, with no more than 120 mW per transistor element. The device features independent transistor elements to prevent interference and is compatible with automatic mounting machines. The SOT-363 package measures 2.0 mm × 2.1 mm. It meets the RoHS standard for environmental compliance.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | UMZ1N | UMZ1N |
| Product Name | NPN+PNP, SOT-363, General Purpose Amplification Transistor | PNP+NPN General Purpose Amplification Transistor |
| Polarity | NPN; PNP | NPN; PNP |
