UMY1N is a dual transistor device integrating a PNP and an NPN transistor with common emitters in a SOT-353 package, designed for general purpose small signal amplification. The PNP transistor has a collector-emitter voltage rating of -50V and a collector current of -150mA, while the NPN transistor has a collector-emitter voltage rating of 50V and a collector current of 150mA. Total power dissipation is limited to 150mW. The device meets AEC-Q200 and RoHS standards. It is packaged in tape and reel with a reel size of 180mm and a tape width of 8mm, containing 3000 pieces per reel.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | UMY1N | UMY1N |
| Product Name | NPN+PNP, SOT-353, General Purpose Amplification Transistor | PNP+NPN General Purpose Amplification Transistor |
| Polarity | NPN; PNP | NPN; PNP |
