The UMT1N FHA is an isolated dual PNP transistor in a SOT-363 (UMT6) package, designed for general-purpose small-signal amplification. Each transistor has a collector-emitter voltage rating of -50 V, a collector current rating of -150 mA, and a total power dissipation of 150 mW, with 120 mW per element. The device is AEC-Q101 qualified for automotive applications. The package measures 2.0 mm × 2.1 mm × 0.9 mm and supports automated mounting.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | UMT1NFHA | UMT1NFHA |
| Product Name | PNP+PNP, SOT-363, General Purpose Amplification Transistor for Automotive | PNP+PNP General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
| Polarity | PNP | PNP |
