The UMH8N is a dual NPN complex digital transistor in a UMT6 (SOT-363) package, integrating two built-in bias resistors for simplified inverter and driver circuit design. Each transistor has a collector-emitter voltage rating of 50 V and a collector current rating of 100 mA, with a total power dissipation of 150 mW. The input resistance is 7 to 13 kΩ, and the DC current gain ranges from 100 to 600. The device is RoHS compliant and features thin-film resistors for isolation and elimination of parasitic effects. The package measures 2.10 mm in length, 1.35 mm in width, and 1.00 mm in height.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | UMH8N | UMH8N |
| Product Name | NPN+NPN, SOT-363, Dual Digital Transistor (Bias Resistor Built-in Transistor) | NPN+NPN Digital transistor(with built-in resistors) |
| Polarity | NPN | NPN |
