The UMH4N FHA is a dual NPN digital transistor with built-in bias resistors in an SOT-363 (UMT6) package, designed for automotive applications and qualified to AEC-Q101. Each transistor has a collector-emitter voltage rating of 50 V, a collector current of 100 mA, and a power dissipation limit of 150 mW total (120 mW per element). The device features independent transistor elements, reducing interference, and supports automatic mounting. Input resistance is specified between 7 and 13 kΩ, with a DC current gain ranging from 100 to 600. The junction temperature range is -55⁰C to +150⁰C.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | UMH4NFHA | UMH4NFHA |
| Product Name | NPN+NPN, SOT-363, Dual Digital Transistor (Bias Resistor Built-in Transistor) for automotive | NPN+NPN Digital transistor (Corresponds to AEC-Q101) |
| Polarity | NPN | NPN |
