ROHM Semiconductor GmbH NPN+NPN, SOT-363, Dual Digital Transistor (Bias Resistor Built-in Transistor) UMH33N

Description
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Description
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Datasheet
Datasheet Summary
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The UMH33N is a dual NPN digital transistor with built-in bias resistors, packaged in an SOT-363 (UMT6) case, designed for muting applications. Each transistor has a collector-emitter voltage rating of 20 V, a collector current of 400 mA, and an input resistance of 2.2 kΩ. The output ON resistance is 0.6 Ω at 5 V, and the emitter-base breakdown voltage is 40 V. The maximum junction temperature is 150 °C, and the storage temperature range is -55 °C to +150 °C.

Datasheet Summary
Powered by GS/AI

The UMH33N is a dual NPN digital transistor with built-in bias resistors, packaged in an SOT-363 (UMT6) case, designed for muting applications. Each transistor has a collector-emitter voltage rating of 20 V, a collector current of 400 mA, and an input resistance of 2.2 kΩ. The output ON resistance is 0.6 Ω at 5 V, and the emitter-base breakdown voltage is 40 V. The maximum junction temperature is 150 °C, and the storage temperature range is -55 °C to +150 °C.

Suppliers

Company
Product
Description
Supplier Links
NPN+NPN, SOT-363, Dual Digital Transistor (Bias Resistor Built-in Transistor) - UMH33N - ROHM Semiconductor GmbH
Willich, Germany
NPN+NPN, SOT-363, Dual Digital Transistor (Bias Resistor Built-in Transistor)
UMH33N
NPN+NPN, SOT-363, Dual Digital Transistor (Bias Resistor Built-in Transistor) UMH33N
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.

Supplier's Site Datasheet
NPN+NPN Digital transistor(with built-in resistors) - UMH33N - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
NPN+NPN Digital transistor(with built-in resistors)
UMH33N
NPN+NPN Digital transistor(with built-in resistors) UMH33N
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH ROHM Semiconductor USA, LLC
Product Category Transistors Transistors
Product Number UMH33N UMH33N
Product Name NPN+NPN, SOT-363, Dual Digital Transistor (Bias Resistor Built-in Transistor) NPN+NPN Digital transistor(with built-in resistors)
Polarity NPN NPN
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