Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6
Manufacturer: Rohm Semiconductor
Win Source Part Number: 036008-UMH2NTN
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: UMT6
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 68 @ 5mA, 5V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
TRANS 2NPN PREBIAS 0.15W UMT6 Product overview: UMH2NTN from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.15W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.15W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-UMH2NTN can be used for catalog matching and distributor lookup.
TRANSISTOR DUAL UM6 NPN/NPN; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:47kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / RoHS Compliant: Yes
TRANS 2NPN PREBIAS 0.15W UMT6
TRANS 2NPN PREBIAS 0.15W UMT6
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | UMH2NTNDKR-ND | 036008-UMH2NTN | 293-UMH2NTN | 40P3408 | UMH2NTN | UMH2NTN |
| Product Name | Bipolar Transistor Arrays, Pre-Biased | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - UMH2NTN | 0.15W Bipolar Transistor | Transistor Dual Um6 Npn/npn; Digital Transistor Polarity Rohm | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistor Arrays, Pre-Biased |
| Polarity | NPN | NPN; 2 NPN - Pre-Biased (Dual) | NPN | NPN | 2 NPN - Pre-Biased (Dual); NPN | |
| Package Type | 6-TSSOP, SC-88, SOT-363 | SOT3; UMT6 | Tape & Reel (TR) | TO-3 | 6-TSSOP, SC-88, SOT-363 | |
| Packing Method | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | |||
| VCEO | 50 volts | 50 volts | 50 volts |
