The UMH2N is a dual digital transistor with built-in resistors in a SOT-363 package, designed for inverter, interface, and driver applications. It contains two independent NPN transistors with a maximum collector current of 100 mA and a supply voltage rating of 50 V. Power dissipation per element is limited to 120 mW, with a maximum junction temperature of 150 °C. Input resistance is specified between 32.9 kΩ and 61.1 kΩ, and input current at 5 V is up to 180 µA. The device supports automatic mounting on SMT3 machines and is supplied in a 3000-piece reel. It meets RoHS standards.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | UMH2N | UMH2N |
| Product Name | NPN+NPN, SOT-363, Dual Digital Transistor (Bias Resistor Built-in Transistor) | NPN+NPN Digital transistor(with built-in resistors) |
| Polarity | NPN | NPN |
