ROHM Semiconductor USA, LLC Bipolar Transistor Arrays, Pre-Biased UMF23NTR

Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V 100mA, 150mA 250MHz, 140MHz 150mW Surface Mount UMT6
Request a Quote Datasheet
Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V 100mA, 150mA 250MHz, 140MHz 150mW Surface Mount UMT6
Request a Quote Datasheet

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Bipolar Transistor Arrays, Pre-Biased - UMF23NTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
UMF23NTR-ND
Bipolar Transistor Arrays, Pre-Biased UMF23NTR-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V 100mA, 150mA 250MHz, 140MHz 150mW Surface Mount UMT6

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V 100mA, 150mA 250MHz, 140MHz 150mW Surface Mount UMT6

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - UMF23NTR - 048507-UMF23NTR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - UMF23NTR
048507-UMF23NTR
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - UMF23NTR 048507-UMF23NTR
Manufacturer: Rohm Semiconductor Win Source Part Number: 048507-UMF23NTR Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz, 140MHz Transistor Polarity: 1 NPN Pre-Biased, 1 PNP Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Not For New Designs Case / Package: UMT6 Maximum Current Collector: 100mA, 150mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA / 500mV @ 5mA, 50mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 30 @ 5mA, 5V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 048507-UMF23NTR
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz, 140MHz
Transistor Polarity: 1 NPN Pre-Biased, 1 PNP
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Case / Package: UMT6
Maximum Current Collector: 100mA, 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA / 500mV @ 5mA, 50mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 30 @ 5mA, 5V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
UMF23NTR
Bipolar Transistors - Pre-Biased UMF23NTR
Bipolar Transistors - Pre-Biased COMPLEX BIOPLAR PNP+DTR

Bipolar Transistors - Pre-Biased COMPLEX BIOPLAR PNP+DTR

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - UMF23NTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
UMF23NTR
Discrete Semiconductor Products - Transistors - Bipolar (BJT) UMF23NTR
TRANS NPN PREBIAS/PNP 0.15W UMT6

TRANS NPN PREBIAS/PNP 0.15W UMT6

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number UMF23NTR-ND 048507-UMF23NTR UMF23NTR UMF23NTR
Product Name Bipolar Transistor Arrays, Pre-Biased TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - UMF23NTR Bipolar Transistors - Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; PNP NPN; PNP; 1 NPN Pre-Biased, 1 PNP
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