ROHM Semiconductor USA, LLC 0.15W Bipolar Transistor UMF23N

Description
TRANS NPN PREBIAS/PNP 0.15W UMT6 Product overview: UMF23N from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.15W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.15W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-UMF23N can be used for catalog matching and distributor lookup.
Request a Quote Datasheet
Description
TRANS NPN PREBIAS/PNP 0.15W UMT6 Product overview: UMF23N from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.15W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.15W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-UMF23N can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
0.15W Bipolar Transistor
293-UMF23N
0.15W Bipolar Transistor 293-UMF23N
TRANS NPN PREBIAS/PNP 0.15W UMT6 Product overview: UMF23N from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.15W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.15W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-UMF23N can be used for catalog matching and distributor lookup.

TRANS NPN PREBIAS/PNP 0.15W UMT6 Product overview: UMF23N from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.15W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.15W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-UMF23N can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - UMF23N - 048506-UMF23N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - UMF23N
048506-UMF23N
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - UMF23N 048506-UMF23N
Manufacturer: Rohm Semiconductor Win Source Part Number: 048506-UMF23N Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz, 140MHz Transistor Polarity: 1 NPN Pre-Biased, 1 PNP Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Not For New Designs Case / Package: UMT6 Maximum Current Collector: 100mA, 150mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA / 500mV @ 5mA, 50mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 30 @ 5mA, 5V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 048506-UMF23N
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz, 140MHz
Transistor Polarity: 1 NPN Pre-Biased, 1 PNP
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Case / Package: UMT6
Maximum Current Collector: 100mA, 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA / 500mV @ 5mA, 50mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 30 @ 5mA, 5V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

Buy Now Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number 293-UMF23N 048506-UMF23N
Product Name 0.15W Bipolar Transistor TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - UMF23N
Polarity NPN; PNP NPN; PNP; 1 NPN Pre-Biased, 1 PNP
Unlock Full Specs
to access all available technical data