The UMD9N FHA is a dual digital transistor in a SOT-363 package, integrating one NPN and one PNP transistor with built-in bias resistors for use in inverter, interface, and driver applications. Each transistor has a collector current rating of 100 mA and a collector-emitter voltage of 50 V. The total power dissipation is 150 mW, with no more than 120 mW per element. The device is AEC-Q101 qualified for automotive applications, features independent transistor elements to reduce interference, and supports automated mounting.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | UMD9NFHA | UMD9NFHA |
| Product Name | NPN+PNP, SOT-363, Dual Digital Transistor (Bias Resistor Built-in Transistor) for automotive | PNP+NPN Digital transistor (Corresponds to AEC-Q101) |
| Polarity | NPN; PNP | NPN; PNP |
