UMD9N is a dual complex digital transistor in a UMT6 (SOT-363) package, integrating an NPN and PNP transistor with built-in bias resistors (R1 = 10 kΩ, R2 = 47 kΩ) to enable inverter circuit design without external resistors. It supports a maximum collector current of ±100 mA and supply voltage of ±50 V, with a total power dissipation of 150 mW. The device operates with a junction temperature up to 150 °C and is RoHS compliant. Its compact size measures 2.0 mm × 2.1 mm × 1.0 mm.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | UMD9N | UMD9N |
| Product Name | NPN+PNP, SOT-363, Dual Digital Transistor (Bias Resistor Built-in Transistor) | PNP+NPN Digital transistor (with built-in resistors) |
| Polarity | NPN; PNP | NPN; PNP |
