UMB4N is a dual digital transistor with two independent PNP transistors featuring built-in base resistors, packaged in an SOT-363 case measuring 2.0mm × 2.1mm. Each transistor has a collector-emitter voltage rating of -50V, a collector current rating of -100mA, and a power dissipation limit of 120mW per element. The device exhibits a DC current gain (hFE) of 100 to 600 at -1mA collector current, an input resistance of 7 to 13kΩ, and a collector-emitter saturation voltage of ≤300mV at -10mA collector and -1mA base current. It operates from -55°C to 150°C and meets RoHS standards for environmental compliance. The part is designed for inverter, interface, and driver applications with surface-mount compatibility.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | UMB4N | UMB4N |
| Product Name | PNP+PNP, SOT-363, Dual Digital Transistor (Bias Resistor Built-in Transistor) | PNP+PNP Digital transistor (with built-in resistors) |
| Polarity | PNP | PNP |
