ROHM Semiconductor USA, LLC TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - UMB3NTN UMB3NTN

Manufacturer: Rohm Semiconductor
Win Source Part Number: 035982-UMB3NTN
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 2 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: UMT6
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 2.5mA, 5mA
Collector Cut-off Current(Max): 500nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 1mA, 5V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient

Pre-Biased Bipolar Transistor (BJT)

TRANS PREBIAS DUAL PNP UMT6 Product overview: UMB3NTN from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-UMB3NTN can be used for catalog matching and distributor lookup.