Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6
TRANS PREBIAS DUAL PNP UMT6
TRANS PREBIAS DUAL PNP UMT6 Product overview: UMB2NTN from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-UMB2NTN can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 035981-UMB2NTN
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 2 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: UMT6
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 68 @ 5mA, 5V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient
TRANSISTOR DUAL, PNP/PNP, UM6; Digital Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:47kohm; Base-Emitter Resistor R2:47kohm; No. of Pins:6 Pin RoHS Compliant: Yes
TRANS PREBIAS DUAL PNP UMT6
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors |
| Product Number | UMB2NTNTR-ND | UMB2NTN | 293-UMB2NTN | 035981-UMB2NTN | 40P3398 | UMB2NTN |
| Product Name | Bipolar Transistor Arrays, Pre-Biased | Bipolar Transistor Arrays, Pre-Biased | Dual Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - UMB2NTN | Transistor Dual, Pnp/pnp, Um6; Digital Transistor Polarity Rohm | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | PNP | 2 PNP - Pre-Biased (Dual); PNP | PNP | PNP; 2 PNP - Pre-Biased (Dual) | PNP | |
| Package Type | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | SOT3; UMT6 | TO-3 | |
| IC(max) | 100 milliamps | 100 milliamps | ||||
| VCEO | 50 volts | 50 volts | 50 volts | |||
| Operating Frequency | 250 MHz | 250 MHz |
