ROHM Semiconductor USA, LLC Bipolar Transistor Arrays, Pre-Biased UMB11NFHATN

The UMB11N FHA is a dual PNP digital transistor designed for general-purpose applications. It operates with a maximum collector-emitter voltage of -50V and supports a continuous collector current of up to -100mA. The device features a base input resistor of 10kOc and a base-emitter resistor also of 10kOc, ensuring stable operation in various circuit configurations. This transistor is packaged in a SOT-363 (UMT6) format, allowing for efficient use of space and compatibility with automatic mounting machines. The independent transistor elements help to eliminate interference, making it suitable for applications such as inverters, interfaces, and drivers. The product is AEC-Q101 qualified, indicating its reliability for automotive applications. With a power dissipation rating of 150mW and a junction temperature limit of 150¬8C, the UMB11N FHA is designed to perform effectively under typical operating conditions. It is also RoHS compliant, ensuring it meets environmental standards.