MOSFET 2P-CH 30V 0.2A UMT6 Product overview: UM6J1NTN from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 0.2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-UM6J1NTN can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1116391-UM6J1NTN
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: UMT6
Maximum Power Dissipation: 150mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 200mA
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Input Capacitance: 30pF @ 10V
Maximum Rds On at Id,Vgs: 1.4 Ohm @ 200mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Mosfet Array 2 P-Channel (Dual) 30V 200mA 150mW Surface Mount UMT6
Mosfet Array 2 P-Channel (Dual) 30V 200mA 150mW Surface Mount UMT6
Mosfet Array 2 P-Channel (Dual) 30V 200mA 150mW Surface Mount UMT6
MOSFET TRANS MOSFET PCH 30V 0.2A 6PIN
MOSFET, DUAL P-CH, -30V, SOT-363; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-200mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.9ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power RoHS Compliant: Yes
MOSFET 2P-CH 30V 0.2A UMT6
MOSFET 2P-CH 30V 0.2A UMT6
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-UM6J1NTN | 1116391-UM6J1NTN | UM6J1NTNTR-ND | UM6J1NTN | 10AC9327 | UM6J1NTN | UM6J1NTN |
| Product Name | 30V 0.2A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - UM6J1NTN | FET, MOSFET Arrays | MOSFET | Mosfet, Dual P-Ch, -30V, Sot-363; Transistor Polarity Rohm | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; 2 P-Channel (Dual) | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 2.00E-5 kS | ||||||
| PD | 150 milliwatts | 150 milliwatts | |||||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) |
