The UM6J1N is a dual P-channel MOSFET in an SOT-363 package, designed for switching applications with independent channels to reduce mounting area and cost. It has a drain-source voltage rating of -30 V, a continuous drain current of ±200 mA, and a maximum power dissipation of 150 mW. The static drain-source on-state resistance is up to 1.4 Ω at -10 V gate-source voltage and -200 mA drain current. The package dimensions and thermal resistance are specified with each terminal mounted on a reference land. Operating junction and storage temperature range is -55 to +150 ℃. The device is supplied in an 180 mm reel, taped, with a basic ordering unit of 3000 pieces.
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
4V Drive Pch MOSFET Product overview: UM6J1N from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-UM6J1N can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1277211-UM6J1N
Manufacturer Homepage: www.rohm.com
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | UM6J1N | UM6J1N | 285-UM6J1N | 1277211-UM6J1N |
| Product Name | 4V Drive Pch+Pch MOSFET | 4V Drive Pch+Pch MOSFET | 4V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - UM6J1N |
| Polarity | P-Channel | P-Channel | ||
| V(BR)DSS | -30 volts | -30 volts | ||
| IDSS | -200 milliamps | -200 milliamps | ||
| PD | 150 milliwatts | 150 milliwatts |
