ROHM Semiconductor USA, LLC 4V Drive Nch+Pch MOSFET SP8M6

Description
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Request a Quote Datasheet
Description
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
4V Drive Nch+Pch MOSFET - SP8M6 - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
4V Drive Nch+Pch MOSFET
SP8M6
4V Drive Nch+Pch MOSFET SP8M6
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SP8M6 - 192341-SP8M6 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SP8M6
192341-SP8M6
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SP8M6 192341-SP8M6
Manufacturer: Rohm Semiconductor Win Source Part Number: 192341-SP8M6 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5A, 3.5A Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 3.9nC @ 5V Max Input Capacitance: 230pF @ 10V Maximum Rds On at Id,Vgs: 51 mOhm @ 5A, 10V Alternative Parts (Cross-Reference): SI4532ADY-T1-E3; SP8M6FU6TB; SP8M6; SP8M6TB; Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited

Manufacturer: Rohm Semiconductor
Win Source Part Number: 192341-SP8M6
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5A, 3.5A
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 3.9nC @ 5V
Max Input Capacitance: 230pF @ 10V
Maximum Rds On at Id,Vgs: 51 mOhm @ 5A, 10V
Alternative Parts (Cross-Reference): SI4532ADY-T1-E3; SP8M6FU6TB; SP8M6; SP8M6TB;
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
30V 5A 3.5A MOSFET Transistor
285-SP8M6
30V 5A 3.5A MOSFET Transistor 285-SP8M6
MOSFET N/P-CH 30V 5A/3.5A 8SOIC Product overview: SP8M6 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5A, 3.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5A, 3.5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SP8M6 can be used for catalog matching and distributor lookup.

MOSFET N/P-CH 30V 5A/3.5A 8SOIC Product overview: SP8M6 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5A, 3.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5A, 3.5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SP8M6 can be used for catalog matching and distributor lookup.

Supplier's Site

Technical Specifications

  ROHM Semiconductor USA, LLC Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SP8M6 192341-SP8M6 285-SP8M6
Product Name 4V Drive Nch+Pch MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - SP8M6 30V 5A 3.5A MOSFET Transistor
Polarity N-Channel; P-Channel P-Channel
V(BR)DSS 30 volts 30 volts
IDSS 5000 milliamps
PD 2000 milliwatts 2000 milliwatts 2000 milliwatts
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