Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 192341-SP8M6
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5A, 3.5A
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 3.9nC @ 5V
Max Input Capacitance: 230pF @ 10V
Maximum Rds On at Id,Vgs: 51 mOhm @ 5A, 10V
Alternative Parts (Cross-Reference): SI4532ADY-T1-E3; SP8M6FU6TB; SP8M6; SP8M6TB;
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
| ROHM Semiconductor USA, LLC | Win Source Electronics | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SP8M6 | 192341-SP8M6 |
| Product Name | 4V Drive Nch+Pch MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SP8M6 |
| Polarity | N-Channel; P-Channel | P-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 5000 milliamps | |
| PD | 2000 milliwatts | 2000 milliwatts |
