ROHM Semiconductor USA, LLC 4V Drive Nch+Pch MOSFET SP8M10

Description
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Description
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

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4V Drive Nch+Pch MOSFET - SP8M10 - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
4V Drive Nch+Pch MOSFET
SP8M10
4V Drive Nch+Pch MOSFET SP8M10
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

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Technical Specifications

  ROHM Semiconductor USA, LLC
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number SP8M10
Product Name 4V Drive Nch+Pch MOSFET
Polarity N-Channel; P-Channel
V(BR)DSS 30 volts
IDSS 7000 milliamps
PD 2000 milliwatts
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