The SH8J62 is a dual P-channel MOSFET in an SOP8 package, designed for switching applications. Each element has a drain-source voltage rating of -30 V and a continuous drain current of ±4.5 A. The device features a maximum total power dissipation of 2.0 W and an on-resistance of up to 84 mΩ at -2.5 A and -4.0 V gate-source bias. It includes built-in gate-source protection diodes and body diodes, with a channel temperature range up to 150°C. The package dimensions are consistent with standard SOP8, and each lead has identical dimensions. Storage temperature ranges from -55°C to +150°C.
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1248686-SH8J62
Manufacturer Homepage: www.rohm.com
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
4V Drive Pch+Pch MOSFET Product overview: SH8J62 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SH8J62 can be used for catalog matching and distributor lookup.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SH8J62 | SH8J62 | 1248686-SH8J62 | 285-SH8J62 |
| Product Name | 4V Drive Pch+Pch MOSFET | 4V Drive Pch+Pch MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SH8J62 | 4V MOSFET Transistor |
| Polarity | P-Channel | P-Channel | ||
| V(BR)DSS | -30 volts | -30 volts | ||
| IDSS | -4500 milliamps | -4500 milliamps | ||
| PD | 2000 milliwatts | 2000 milliwatts |
